Temperature bandgaps and thermal dopants arising from photothermal nonlinearities in high-Q silicon metasurfaces
Punnag Padhy, Mohammad Asif Zaman, Jennifer Dionne

TL;DR
This paper explores how high-Q silicon metasurfaces exhibit unique temperature bandgaps due to photothermal nonlinearities, enabling tunable, localized heating for potential on-chip catalytic and biochemical applications.
Contribution
It reveals the existence of a Q-factor-dependent temperature bandgap and demonstrates how nonlinearities can be used to control thermal states in silicon metasurfaces.
Findings
Temperature differences up to 90°C based on excitation pathway.
Identification of a 60°C temperature gap related to Q-factor.
Observation of bistable thermal states and their dynamics.
Abstract
Strong light-matter interactions in silicon metasurfaces give rise to photothermal nonlinearities. While the effect of this strong coupling on light has been extensively studied, its impact on matter remains largely unexplored. Here, we investigate photothermal energy harvesting using strong light-matter interactions in high-quality-factor metasurfaces. First, we show that maximum metasurface temperatures can differ by based on the spectral excitation pathway: direct excitation of the metasurface from its nominal equilibrium by a single wavelength results in lower metasurface temperatures compared to continuous spectral scans. Investigating the temporal dynamics of this thermo-optic nonlinearity, we show an initial linear rise to a critical temperature over of seconds, followed by a rapid rise to the high temperature steady state in around the bistable…
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Taxonomy
TopicsPlasmonic and Surface Plasmon Research · Metamaterials and Metasurfaces Applications · Strong Light-Matter Interactions
