Modification of Hanle and polarization recovery curves under interplay of hopping and quantum measurement back action

TL;DR

This paper investigates how electron hopping and quantum measurement back action influence Hanle and polarization recovery curves, revealing their interplay's impact on spin dynamics in localized charge carriers.

Contribution

It introduces a model accounting for the combined effects of hopping and measurement back action on spin polarization, explaining diverse experimental observations.

Findings

Hopping and measurement back action similarly affect spin polarization in Faraday geometry.

In Voigt geometry, hopping and back action effects compete, altering polarization curves.

The model explains a wide range of experimental results on localized electron spins.

Abstract

The measurements of Hanle and polarization recovery effects for localized charge carriers are the basic tools for determining parameters of the spin dynamics, such as strength of the hyperfine interaction, for example, in quantum dots. We describe the dependence of the spin polarization of localized electrons on transverse and longitudinal magnetic fields taking into account the interplay between electron hopping and measurement back action. We show that these two have a qualitatively similar effect in the Faraday geometry, but compete in the Voigt geometry. This allows one to describe a broad range of the experimental results and study the fundamental effects of quantum measurements.