Interface Roughness Scattering Processes in Quantum wells in a Tilted Quantizing Magnetic Field
M.P. Telenkov, Yu.A. Mityagin

TL;DR
This paper derives an expression for interface roughness scattering rates in quantum wells under tilted magnetic fields, analyzing how various parameters influence scattering behavior.
Contribution
It introduces a new analytical expression for scattering rates considering tilted magnetic fields, enhancing understanding of quantum well transport properties.
Findings
Scattering rate depends on magnetic field strength and tilt angle.
Quantum well potential profile affects scattering behavior.
Interface roughness parameters influence scattering trends.
Abstract
Scattering processes by the interface roughness in a quantum well in a quantizing magnetic field are considered. An expression for the scattering rate is derived for a magnetic field tilted relative to the quantum well layers. By analyzing this expression, trends in the behavior of the scattering rate are established with variation in the magnetic field strength and orientation, the potential profile of the quantum well, and the interface roughness parameters.
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Taxonomy
TopicsQuantum and electron transport phenomena · Random lasers and scattering media · Semiconductor Quantum Structures and Devices
