Active Noise Reduction in Si/SiGe Gated Quantum Dots
Rajat Bharadwaj, Parvathy Gireesan, Harikrishnan Sundaresan, Chithra H Sharma, Lucky Donald L Kynshi, Prasad Muragesh, D. Bougeard, and Madhu Thalakulam

TL;DR
This paper introduces an active noise cancellation method for quantum devices operating at ultra-low temperatures, effectively suppressing environmental interference and improving device stability without passive filtering drawbacks.
Contribution
It presents a real-time, adaptive active noise cancellation scheme that dynamically compensates for environmental noise in solid-state quantum devices, demonstrated on Si/SiGe quantum dots.
Findings
Significant noise suppression at 50 Hz interference
Enhanced stability of Coulomb blockade measurements
Broad applicability to solid-state quantum technologies
Abstract
Solid-state quantum technologies such as quantum dot qubits and quantum electrical metrology circuits rely on quantum phenomena at ultra-low energies, making them highly sensitive to various forms of environmental noise. Conventional passive filtering schemes can reduce high-frequency noise but are often ineffective against low-frequency interference, like powerline or instrument-induced. Extending such filters to lower frequencies causes practical issues such as longer stabilization times, slower system response, and increased Johnson noise, which impede low-frequency transport measurements. To address these limitations, we propose and experimentally demonstrate a generalized active noise cancellation scheme for quantum devices operating at sub-Kelvin temperatures. Our approach compensates periodic environmental interference by dynamically injecting a phase-coherent anti-noise signal…
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Taxonomy
TopicsQuantum and electron transport phenomena · Mechanical and Optical Resonators · Advancements in Semiconductor Devices and Circuit Design
