Crossover from quantum correlation to hot-carrier transport in scattering-tolerant 2D transistors

TL;DR

This paper demonstrates a 2D transistor that transitions from quantum correlation effects at low temperatures to hot-carrier dominated transport at higher temperatures, achieving record-high mobility and surpassing traditional FETs.

Contribution

It introduces a novel 2D transistor architecture on ferroelectric substrate enabling the study of the crossover between quantum and hot-carrier transport regimes.

Findings

Reproducible quasi-periodic current fluctuations at cryogenic temperatures.

High room-temperature electron mobility of ~4,800 cm^2/Vs.

Surpassed traditional FET performance metrics.

Abstract

Quantum correlation and hot-carrier transport represent two fundamentally distinct regimes of electronic conduction, rarely accessible within the same device. Here, we report a state-of-the-art monolayer transition metal dichalcogenides transistor architecture on a ferroelectric substrate that enables this crossover by leveraging the strong dielectric screening and in-plane gate control. At cryogenic temperatures, the devices exhibit reproducible quasi-periodic current fluctuations, consistent with an emergent potential landscape driven by electron-electron interactions at low carrier densities. As the temperature increases, this correlated potential profile thermally dissolves and transport is dominated by the lateral gate-field that drives the carriers with high kinetic energy. These hot-carriers can efficiently surmount the scattering events, exhibiting a record-high room-temperature electron mobility of ~4,800 cm^2/Vs and a maximum on-current ~0.5 mA/{\mu}m, surpassing traditional FETs in key performance metrics. These findings establish a unified approach for probing intermediate mesoscopic orders, while advancing the transistor performance limits in scalable 2D transistors.