MDM: Manhattan Distance Mapping of DNN Weights for Parasitic-Resistance-Resilient Memristive Crossbars
Matheus Farias, Wanghley Martins, H. T. Kung

TL;DR
This paper introduces MDM, a novel weight mapping technique for memristive crossbars that reduces parasitic resistance effects, improves accuracy, and enhances the efficiency of CIM-based DNN accelerators.
Contribution
MDM optimizes active-memristor placement using Manhattan distance and bit-level sparsity, reducing nonideality and improving DNN performance on memristive crossbars.
Findings
Reduces nonideality factor by up to 46%
Improves accuracy under analog distortion by 3.6% on average
Enhances CIM crossbar efficiency and scalability
Abstract
Manhattan Distance Mapping (MDM) is a post-training deep neural network (DNN) weight mapping technique for memristive bit-sliced compute-in-memory (CIM) crossbars that reduces parasitic resistance (PR) nonidealities. PR limits crossbar efficiency by mapping DNN matrices into small crossbar tiles, reducing CIM-based speedup. Each crossbar executes one tile, requiring digital synchronization before the next layer. At this granularity, designers either deploy many small crossbars in parallel or reuse a few sequentially-both increasing analog-to-digital conversions, latency, I/O pressure, and chip area. MDM alleviates PR effects by optimizing active-memristor placement. Exploiting bit-level structured sparsity, it feeds activations from the denser low-order side and reorders rows according to the Manhattan distance, relocating active cells toward regions less affected by PR and thus…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
