Electron and hole $g$ factors in semiconductors and nanostructures (Review)

TL;DR

This review comprehensively covers experimental and theoretical research on electron and hole g factors in semiconductors and nanostructures, highlighting measurement techniques and calculation methods for understanding spin responses to magnetic fields.

Contribution

It provides an extensive synthesis of experimental data and theoretical approaches for calculating g factors across various semiconductor systems, including recent advances.

Findings

Comparison of measurement techniques for g factors

Analysis of theoretical models for g factor calculation

Summary of g factor values in different materials

Abstract

We present a review of experimental and theoretical studies of the spin response of charge carriers to an external magnetic field in bulk semiconductors and semiconductor nanostructures. The linear response is quantitatively characterized by the magnitude of the electron or hole g factor. Various experimental methods for measuring the electron g factor are considered, beginning with historical works and including modern research. A detailed analysis of theoretical methods for calculating the electron and hole g factors in bulk semiconductors and nanostructures of various shapes also includes fundamental work from previous years and the present time.