Monochromatic Electron Emission from Graphene-Insulator-Semiconductor-Structured Electron Source Utilizing Interference Efficets

TL;DR

This paper investigates how electron interference effects in graphene-insulator-semiconductor structures influence electron emission properties, demonstrating that controlled diffraction and multilayer reflections can produce highly monochromatic electron beams.

Contribution

It provides a numerical analysis of electron wave packet motion in graphene-based structures, revealing how multilayer reflections affect energy spread and monochromaticity of emitted electrons.

Findings

Multiple reflections broaden energy spread at 13.4 eV

Highly monochromatic emission achieved with small aperture

Interference effects influence emission properties

Abstract

The graphene-insulator-semiconductor-structured electron source has garnered significant attention due to its high electron emission efficiency and highly monochromatic electron emission. Graphene, with its c-axis orientation and well-defined interlayer spacing, exhibits electron interference effects that can influence the properties of emitted electrons. In this work, motion of an electron wave packet is numerically calculated to discuss the energy spread of the zero-order and first-order diffracted electron waves by mono- and multilayer graphene. It is found that the effects of multiple reflections of electron between the layers broaden the energy spread especially for the incident energy of 13.4 eV, and that highly monochromatic electron emission can be achieved by using diffracted electron wave with a small aperture.