$C_{3}$-Symmetry-induced Antisymmetric Planar Hall effect and Magnetoresistance in Single-Crystalline Ferromagnets

TL;DR

This study reveals that the antisymmetric planar Hall effect and magnetoresistance in single-crystalline ferromagnets originate from the intrinsic anisotropic magnetoresistance tensor linked to C3 symmetry and perpendicular magnetic anisotropy.

Contribution

It demonstrates that conventional anisotropic magnetoresistance can produce antisymmetric galvanomagnetic effects in C3-symmetric ferromagnetic thin films, connecting symmetry and transport phenomena.

Findings

Discovery of antisymmetric PHE and magnetoresistance in C3-symmetric ferromagnets.

Intrinsic AMR tensor explains antisymmetric effects.

Link between symmetry, AMR, and antisymmetric galvanomagnetic responses.

Abstract

The planar Hall effect (PHE) is typically symmetric under magnetic field reversal, as required by the Onsager reciprocity relations. Recent advances have identified the antisymmetric PHE (under magnetic field reversal) as an intriguing extension in magnetic systems. While new mechanisms have been proposed, the role of conventional anisotropic magnetoresistance (AMR) in this phenomenon remains unclear. Here, we report the experimental discovery of an antisymmetric (with respect to both magnetic field and magnetization) PHE and magnetoresistance in single-crystal $Co_{30}Pt_{70}$ (111) thin films with $C_{3}$ rotational symmetry and perpendicular magnetic anisotropy (PMA). We demonstrate that both antisymmetric effects arise naturally from the intrinsic fourth-rank AMR tensor inherent to C3-symmetric planes, assisted by PMA. Our findings link conventional AMR to antisymmetric galvanomagnetic responses, offering new insights into symmetry-governed transport in crystalline ferromagnets.