A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors

TL;DR

This paper introduces a compact analytical model for polar multiple-channel FETs, focusing on III-Nitride heterostructures, to improve device design efficiency by estimating carrier densities from electrostatic and quantum principles.

Contribution

The paper presents a novel closed-form model for mobile carrier density in polar multiple-channel FETs, incorporating hole depletion techniques and applied to III-Nitride heterostructures.

Findings

Model accurately estimates electron and hole populations.

Applied to AlGaN/GaN, AlInN/GaN, and AlScN/GaN heterostructures.

Enhances understanding and design of multi-layered transistors.

Abstract

A compact analytical model is developed for the mobile charge density of polar multiple channel field effect transistors. Two dimensional electron and hole gases can be potentially induced by spontaneous and piezoelectric polarization in polar heterostructures. Focusing on the active region of devices that employ a multiple quantum-well layout, the total electron and hole populations are estimated from fundamental electrostatic and quantum mechanical principles. Hole gas depletion techniques, revolving around intentional donor doping, are modeled and evaluated, culminating in a generalized closed-form equation for the mobile carrier density across the doping schemes examined. The utility of this model is illustrated for the III-Nitride material system, exploring AlGaN/GaN, AlInN/GaN and AlScN/GaN heterostructures. The compact framework provided herein considerably elucidates and enhances the efficiency of multi-layered transistor design.