Interaction of moire-induced quantum Hall channels in a locally gated graphene junction
Won Beom Choi, Myungjin Jeon, K. Watanabe, T. Taniguchi, Joonho Jang

TL;DR
This study investigates a novel p-n junction in aligned graphene lacking a band gap or zLL, revealing how van Hove singularities influence quantum Hall edge channel interactions under magnetic fields.
Contribution
It introduces a new type of p-n junction in aligned graphene without a band gap or zLL, highlighting the role of van Hove singularities in quantum Hall edge channel interactions.
Findings
Van Hove singularity emerges at p-n junctions under magnetic fields.
Magnetic breakdown occurs due to doping inversion near the secondary Dirac point.
Interactions between p-type and n-type QH edge channels are influenced by vHS.
Abstract
Manipulating electron quantum 1D channels is an important element in the field of quantum information due to their ballistic and phase coherence properties. In GaAs and graphene based two dimensional gas systems, these edge channels have been investigated with both integer and fractional quantum Hall effects, contributing to the realization of electron interferometer and anyon braiding. Often, at the p-n junction in the quantum Hall (QH) regime, the presence of a depletion region due to a band gap or the formation of gaps between the zeroth Landau levels (zLL) suppresses interaction between the co-propagating edge channels of opposing doping regimes and helps to preserve the phase coherence of the channels. Here, we observe a new type of p-n junction in hexagonal boron nitride aligned graphene that lacks both the zLL and band gap. In this system, a van Hove singularity (vHS) emerges at…
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Taxonomy
TopicsQuantum and electron transport phenomena · Graphene research and applications · Topological Materials and Phenomena
