Crossover between intrinsic and temperature-assisted regimes in spin-orbit torque switching of antiferromagnetic order

TL;DR

This study demonstrates a crossover in spin-orbit torque switching of antiferromagnetic Mn3Sn, showing that reducing device thickness suppresses Joule heating and enables ultrafast, intrinsic switching mechanisms suitable for next-generation memory technologies.

Contribution

The paper reveals a thickness-dependent crossover from temperature-assisted to intrinsic spin-orbit torque switching in antiferromagnetic Mn3Sn, highlighting a pathway for ultrafast memory device design.

Findings

Thinner devices exhibit intrinsic spin-orbit torque switching signatures.

Joule heating interferes with switching in thicker devices.

Ultrafast switching is achievable without significant heating effects.

Abstract

Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of antiferromagnetic states have attracted significant attention. However, under the presence of significant Joule heating that destabilizes the magnetic order, the timescales associated with the switching can be limited to nanoseconds or longer. Here, we present the observation of a crossover in the switching behavior of the chiral antiferromagnet Mn3Sn by tuning the magnetic layer thickness. While Joule heating interferes with switching in thicker devices, we find clear signatures of an intrinsic spin-orbit torque mechanism as the thickness is reduced, avoiding the heating effect. The suppression of heating enables switching without significant attenuation of the readout signal using pulses shorter than those required by temperature-assisted mechanisms. The crossover into the spin-orbit torque switching behavior clarifies the potential for achieving ultrafast switching as expected from the picosecond spin dynamics of antiferromagnets. Our results lay the groundwork for designing antiferromagnetic memory devices that can operate at ultrafast timescales.