Non-uniform Birefringence in Highly-reflective Substrate-Transferred GaAs/Al$_{0.92}$Ga$_{0.08}$As Coatings at 1064 nm
Andri M. Gretarsson, Ambroise L.M. Juston, Benjamin Nicolai, Naomi Borg, Breck N. Meagher, Garrett D. Cole, GariLynn Billingsley, Camille N. Makarem, Elizabeth M. Gretarsson, Gregory M. Harry, Steven D. Penn

TL;DR
This study maps birefringence in GaAs/AlGaAs coatings at 1064 nm, revealing non-uniformities linked to substrate transfer, with implications for optical performance and fabrication improvements.
Contribution
It provides the first detailed birefringence maps of substrate-transferred GaAs/AlGaAs coatings, identifying transfer process as a key source of non-uniformity.
Findings
Birefringence non-uniformity is median 0.1 mrad across coatings.
Epi-on-wafer coatings show the least birefringence non-uniformity.
Non-uniformity likely results from the substrate transfer process.
Abstract
Using a custom-built scanning system, we generated maps of birefringence on reflection at ~nm from single-crystal GaAs/AlGaAs Bragg reflectors (henceforth ``AlGaAs coatings''). Ten coatings were bonded to fused silica substrates and one remained on the epitaxial growth wafer. The average phase difference on reflection between beams polarized along the fast and slow axes of the coating was found to be ~mrad, consistent with values observed in high-finesse optical reference cavities using similar AlGaAs coatings. Scans of substrate-transferred coatings with diameters between 18 and 194 millimeters showed birefringence non-uniformity at a median level of ~mrad. A similar epitaxial multilayer that was not substrate transferred, but remained on the growth wafer, had by far the least birefringence non-uniformity of all mirrors tested…
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Taxonomy
TopicsOptical Coatings and Gratings · Pulsars and Gravitational Waves Research · Semiconductor Quantum Structures and Devices
