Protected Ion Beam Fabrication of Two-Dimensional Transition Metal Dichalcogenides based Photonic Devices
Lekshmi Eswaramoorthy, Parul Sharma, Brijesh Kumar, Abhay Anand, Anuj Kumar Singh, Sudha Mokkapati, Anshuman Kumar

TL;DR
This paper presents a novel fabrication method for 2D transition metal dichalcogenide photonic devices that preserves their optical properties by using polymeric encapsulation and XeF2-assisted ion beam patterning.
Contribution
It introduces a combined approach of PMMA encapsulation and XeF2-assisted FIB patterning to protect 2D TMDCs during fabrication, enabling high-quality photonic device integration.
Findings
Polymeric encapsulation with PMMA effectively mitigates ion-induced damage.
XeF2-assisted Ga ion beam reduces collateral damage and improves pattern precision.
The method enables scalable fabrication of high-performance 2D TMDC photonic devices.
Abstract
Two-dimensional (2D) transition metal dichalcogenides are pivotal for next-generation photonic devices due to their exceptional optical properties and strong light-matter interactions. However, their atomic thinness renders them susceptible to damage during nanoscale fabrication. Focused ion beam technology, while offering precise defect engineering for tailoring optoelectronic properties, often induces collateral damage far beyond the target region, compromising device performance. This study addresses the critical challenge of preserving the intrinsic optical characteristics of 2D TMDCs during FIB patterning. We demonstrate that conventional dielectric encapsulation fails to protect 2D TMDCs from gallium ion-induced damage, leading to persistent defects and quenched optical responses in patterned microstructures. In contrast, polymeric encapsulation with PMMA (polymethyl methacrylate)…
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