Single-Shot All-Optical Switching in CoFeB/MgO Magnetic Tunnel Junctions

TL;DR

This paper demonstrates single-shot all-optical switching in CoFeB/MgO magnetic tunnel junctions, enabling deterministic magnetization reversal using heat control, with potential integration into existing spintronic devices.

Contribution

It introduces a novel method for all-optical switching in CoFeB/MgO MTJs, advancing the integration of optical control with magnetic memory technology.

Findings

Deterministic magnetization reversal achieved via heat tuning.

Magnetization reversal detected through tunnel magnetoresistance.

Ultrafast spin transport and dipolar interactions may be key mechanisms.

Abstract

We demonstrate single shot al optical switching (AOS) in rare earth free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin transfer torque magnetic random access memory (STT MRAM). By tuning the capping layer thickness, we show that precise heat control enables deterministic magnetization reversal from parallel (P) to antiparallel (AP) state. Furthermore, we detect magnetization reversal in a micro scale MTJ device via the tunnel magnetoresistance (TMR) effect. Our findings suggest that ultrafast spin transport or dipolar interactions or a combination of both may play essential roles in the switching process. This work represents a significant step toward integrating AOS with MTJ technology.