Accurate Reporting of Ion Time-of-Flight during HiPIMS with Gated Front-End Mass Spectrometry
Nathan Rodkey, Jyotish Patidar, Kerstin Thorwarth, Sebastian Siol

TL;DR
This paper presents a practical method for accurately measuring ion time-of-flight during HiPIMS using a gated mass spectrometry approach synchronized with the plasma pulses, improving ion measurement precision.
Contribution
The study introduces an experimental approach to determine ion ToF in HiPIMS, addressing errors in transit time estimation and enhancing measurement accuracy with synchronized gating.
Findings
Effective gating synchronized with HiPIMS pulses enables precise ToF measurements.
Shielding and plasma potential measurements confirm minimal interference with plasma.
Comparison with theoretical calculations validates the experimental ToF results.
Abstract
The quality of high-power impulse magnetron sputtering (HiPIMS) deposited films can often improve through the effective use of metal-ion acceleration, requiring precise measurements of time-of-flight (ToF). These measurements are commonly done using time- and energy-resolved mass spectrometry but require careful consideration of the transit time of ions inside. The transit time is typically calculated by considering the travel length in various parts of the spectrometer (e.g. from orifice to detector), but errors associated with these estimations can lead to nonphysical values in a HiPIMS process (e.g. negative ToFs). Here we report a practical approach to determine ion ToF experimentally, using a bipolar HiPIMS power supply to synchronize a gating pulse to the front-end of a HIDEN Analytical EQP-300 mass spectrometer, placed at the working distance. The ToF is measured by applying a…
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