Magnetic-field controlled organic spintronic memristor for neural network computation

TL;DR

This paper introduces a novel organic spintronic memristor that uses magnetic fields to control resistance states, enabling advanced neuromorphic computing with improved pattern recognition and stability.

Contribution

It presents the first organic spintronic memristor with magnetic field control of synaptic states, combining magnetic and electrical modulation for enhanced neuromorphic device performance.

Findings

Device exhibits both LTD and LTP driven by fluorine migration.

Magnetic field modulates resistance states via TMR effect.

CNN simulations show improved accuracy and stability with magnetic tuning.

Abstract

Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic computing systems inspired by the human brain. In this study, we present a novel organic spintronic memristor based on a La0.67Sr0.33MnO3 (LSMO)/poly(vinylidene fluoride) (PVDF)/Co heterostructure, exhibiting biologically inspired synaptic behavior. Driven by fluorine atom migration within the PVDF layer, the device demonstrates both long-term depression (LTD) and long-term potentiation (LTP) under controlled electrical polarization. Distinctively, the resistance states can also be modulated by an external magnetic field via the tunneling magnetoresistance (TMR) effect, introducing a non-electrical means of tuning synaptic plasticity. This magnetic control mechanism enables multi-state modulation without compromising device performance or endurance. Furthermore, convolutional neural network (CNN) simulations incorporating this magnetic tuning capability reveal enhanced pattern recognition accuracy and improved training stability, especially at high learning rates. These findings underscore the potential of organic spintronic memristors as high-performance, low-power neuromorphic elements, particularly suited for applications in flexible and wearable electronics.