Effect of Stochastic Charge Noise in Si/SiGe Quantum-Dot Spin Qubits
Wei-en Chiu, Chia-Hsien Huang, Yi-Hsien Wu, and Hsi-Sheng Goan

TL;DR
This paper develops a stochastic spin-phonon model incorporating 1/f charge noise to accurately predict decoherence in Si/SiGe quantum-dot spin qubits, leading to improved gate fidelity and noise robustness.
Contribution
It introduces a novel non-Markovian noise model based on electric dipole resonance and 1/f spectrum, enhancing decoherence simulation and control pulse optimization.
Findings
More precise decoherence prediction with the stochastic model.
Optimized control pulses significantly reduce error contributions.
Enhanced robustness of pulses against coherent noise.
Abstract
In Si/SiGe quantum dots, the decoherence behavior of spin qubits usually comes from the non-Markovian effect of the charge noise. To improve the performance of using the coherent noise models in the decoherence simulation and tomography analysis, here we propose a spin-phonon model derived from the electric dipole spin resonance to characterize the decoherence behavior of the spin qubit in a Si/SiGe quantum dot. Utilizing a 1/f spectrum to characterize quantum noise correlation, our stochastic model can yield a more precise prediction of decoherence compared to a random coherence model. We also use gate set tomography (GST) to address the error generator and analyze the model violation coming from the non-Markovian effect. Based on the results, we attribute certain error generators of this model to the incoherence error, which avoids the scenario of using too large a coherent noise…
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