Persistence of Layer-Tolerant Defect Levels in ReS2

TL;DR

This study reveals that defect energy levels in ReS2 remain stable across different layer thicknesses, making it a promising material for layer-tolerant optoelectronic and quantum devices.

Contribution

We demonstrate the layer-invariant defect levels in ReS2 and uncover the microscopic mechanisms behind this unique behavior, contrasting it with other TMDs.

Findings

Defect levels in ReS2 are nearly unchanged from monolayer to bulk.

ReS2's defect levels enable layer-tolerant single-photon emission.

Weak interlayer coupling contributes to the invariance.

Abstract

Defects in two-dimensional (2D) semiconductors play a decisive role in determining their electronic, optical, catalytic and quantum properties. Understanding how defect energy levels respond to variations in layer thickness is essential for achieving reproducible and scalable device performance. We report the persistence of layer-tolerant defect levels in rhenium disulfide (ReS2), where both donor- and acceptor-type charge transition levels remain nearly unchanged from monolayer to bulk in both AA and AB stacking. The associated two-level quantum system also retains its character across thicknesses, enabling ReS2 to serve as a platform for layer-tolerant single-photon emitters. The invariance arises from the interplay between electronic energy minimization and structural relaxation, which together counteract quantum confinement and reduced dielectric screening. Additionally, the intrinsically weak interlayer coupling in ReS2 plays a crucial role. Our findings uncover the microscopic origin of this unique behavior, distinguishing ReS2 from other transitionmetal dichalcogenides and highlighting its potential for thickness-independent optoelectronic and quantum photonic applications.