Hybridization in van der Waals epitaxy of PtSe2/h-BN and PtSe2/graphene heterostructures
Meryem Bouaziz, Samir El Masaoudi, Aymen Mahmoudi, Eva Desgue, Marco Pala, Pavel Dudin, Mathieu G. Silly, Julien Chaste, Fabrice Oehler, Pierre Legagneux, Jose Avila, Iann C. Gerber, Abdelkarim Ouerghi

TL;DR
This study compares the electronic properties of PtSe2 monolayers on h-BN and graphene substrates, revealing substrate-dependent hybridization effects and their implications for nanoelectronic applications.
Contribution
It provides a systematic analysis of how different substrates influence the electronic structure and hybridization in PtSe2 vdW heterostructures using ARPES and DFT.
Findings
Interlayer hybridization observed in PtSe2/graphene with minigap openings.
Valence band maximum position varies with substrate, at -0.9 eV (h-BN) and -0.55 eV (graphene).
Substrate plays a crucial role in the electronic properties of vdW heterostructures.
Abstract
Van der Waals (vdW) heterostructures, which combine bi-dimensional materials of different properties, enable a range of quantum phenomena. Here, we present a comparative study between the electronic properties of mono- and bi-layer of platinum diselenide (PtSe2) grown on hexagonal boron nitride (h-BN) and graphene substrates using molecular beam epitaxy (MBE). Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), the electronic structure of PtSe2/graphene and PtSe2/h-BN vdW heterostructures are investigated in systematic manner. In contrast to PtSe2/h-BN, the electronic structure of PtSe2/graphene reveals the presence of interlayer hybridization between PtSe2 and the graphene, which is evidenced by minigap openings in the {\pi}-band of graphene. Furthermore, our measurements show that the valence band maximum (VBM) of monolayer PtSe2 is located at…
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Taxonomy
Topics2D Materials and Applications · Graphene research and applications · Thermal properties of materials
