Electrical properties of PbS films doped with iodine by chemical bath deposition

TL;DR

This study investigates how iodine doping affects the electrical and surface properties of PbS films, revealing optimal doping levels for enhanced photoelectric performance.

Contribution

It provides new insights into the relationship between iodine concentration and the electrical, surface, and photoelectric properties of PbS films.

Findings

Bulk I-V characteristics are ohmic for both doped and undoped films.

Surface I-V behavior shifts from ohmic to rectifying with increased iodine concentration.

Optimal iodine content (2.7 at.%) improves charge carrier lifetime and sensitivity.

Abstract

We present the results of measurements of bulk current-voltage (I-V) characteristics and local surface I-V characteristics by atomic force microscopy (AFM) of iodine-doped PbS films. It is established that bulk I-V curves of both undoped and iodine-doped PbS films demonstrate a linear (ohmic) U(I) dependence. The tipe of local surface I-V characteristics is ohmic at the concentration range of the dopant 0<[NH4I]<=0.10 M and becomes rectifying at [NH4I]>=0.15 M, which is determined by a decrease in the size and a change in the shape of the film grains, as well as a decrease in the surface roughness of the film. An increase in the iodine content in the PbS(I) films leads to nonlinear dependences of the microscopic characteristics and photoelectric parameters of the PbS(I) films. A sharp decrease in the diffusion coefficient, the beginning of an increase in the charge carrier lifetime, a maximum in voltage sensitivity and specific detectability are observed in the PbS(I) film chemically deposited from a reaction mixture containing [NH4I] = 0.15 M. This indicates that the optimalconcentration of iodine in the film is 2.7 at.%.