# High fidelity flopping-mode single spin operation with tuning inter-dot orbital levels

## TL;DR

This paper demonstrates a scalable method for high-fidelity spin control in GaAs quantum dots by tuning inter-dot orbital levels, achieving fast Rabi oscillations and high gate fidelity without relying on material-dependent effects.

## Contribution

The authors introduce a novel approach to optimize spin coherence and control by tuning inter-dot orbital levels and employing machine learning-based feedback, independent of material-specific properties.

## Key findings

- Achieved Rabi frequencies over 100 MHz in GaAs quantum dots.
- Demonstrated a $c/2$ gate fidelity of 99.7% with 4 ns gate time.
- Mitigated low frequency noise effects using machine learning feedback.

## Abstract

Fast spin manipulation and long spin coherence time in quantum dots are essential features for high fidelity semiconductor spin qubits. However, generally it has not been well established how to optimize these two properties simultaneously, because these two properties are usually not independent from each other. Therefore, the scheme for high fidelity operation by simultaneous tuning Rabi frequency and coherence time, which does not rely on the material-dependent strong spin-orbit interaction and the local magnetic field gradient limiting their scalability, are strongly demanded. Here, we demonstrate an approach to achieve high-fidelity spin control by tuning inter-dot spin-orbit coupling in a GaAs triple quantum dot (TQD), where the third dot provides precise control over orbital energy levels. In an electrically stable charge state with optimized tunnel coupling, we achieve Rabi frequencies exceeding 100 MHz while maintaining coherence through proper tuning of the inter-dot orbital levels of the TQD. By implementing a machine learning-based feedback control that efficiently estimates qubit frequency using past measurement data, we characterize and mitigate the impact of low frequency noise on qubit coherence with minimal measurement overhead. Finally, we demonstrate a $\pi$/2 gate fidelity of 99.7\% with a gate time of 4 ns through randomized benchmarking, even in a GaAs quantum dot device where electron spin coherence is typically limited by strong hyperfine interaction with nuclear spins. Our approach provides a scalable strategy for high-fidelity spin control in semiconductor quantum dot arrays by utilizing device-specific parameters rather than relying on material properties or external field gradients.