Magnetism and nonlinear charge transport in NiFe2O4/{\gamma}-Al2O3/SrTiO3 heterostructure: Toward Spintronic Applications

TL;DR

This study demonstrates the synthesis of a NiFe2O4/{\

Contribution

It introduces a low-temperature method to create a ferrimagnetic NiFe2O4 layer on a heterostructure that maintains high mobility and exhibits magneto-electronic rectification for spintronics.

Findings

High-mobility 2DEG at the interface

Metallic behavior down to cryogenic temperatures

Magnetic diode with rectification enhanced by magnetic field

Abstract

We present the synthesis and study of the magnetic and electronic properties of NiFe2O4/{\gamma}-Al2O3/SrTiO3 heterostructure. The {\gamma}-Al2O3/SrTiO3 interface hosts a high-mobility two-dimensional electron gas (2DEG) with large spin-orbit coupling, making it promising for spintronics applications if it can be coupled to a suitable source of spin currents. Here, we synthesize a ferrimagnetic insulating NiFe2O4(001) layer on {\gamma}-Al2O3(001)/SrTiO3(001) using a low-temperature reactive sputtering at 150 deg C without compromising the mobility and charge carrier density of the 2DEG at the {\gamma}-Al2O3(001)/SrTiO3(001) interface. The sheet resistance of both {\gamma}-Al2O3/SrTiO3 and NiFe2O4/{\gamma}-Al2O3/SrTiO3 exhibits metallic behavior down to cryogenic temperatures, with a low temperature upturn driven by the Kondo-like scattering. Most importantly, NiFe2O4/{\gamma}-Al2O3/SrTiO3 behaves as a magnetic diode at low temperatures, and its rectification performance increases significantly with increasing magnetic field strength giving rise to a robust magneto-electronic rectification effect at low temperatures, which provides a first step towards the development of all-oxide heterostructures capable of efficient spin-charge conversion.