Shubnikov-de Haas oscillations and planar Hall effect in HfTe2

TL;DR

This study investigates the electronic properties of HfTe2, revealing its Fermi surface structure, large magnetoresistance, and the presence of Shubnikov-de Haas oscillations and planar Hall effect, advancing understanding of its topological semimetal nature.

Contribution

The paper provides detailed experimental analysis of HfTe2's Fermi surface, magnetotransport properties, and quantum oscillations, offering new insights into its electronic structure.

Findings

Largest unsaturated magnetoresistance of 1.1×10^4% at 14 T and 2 K

Fermi surface consists of three anisotropic pockets

Observation of planar Hall effect and anisotropic magnetoresistance

Abstract

Layered transition-metal dichalcogenide (TMD) HfTe2 is a topological semimetal candidate with increasing attentions recently. The map of the Fermi surface is of interest and importance to understand its properties. Here we present a study of Shubnikov-de Haas (SdH) oscillations and planar Hall effect (PHE) in HfTe2. The single crystals grown by flux method show the largest unsaturated magnetoresistance (MR) effect of 1.1*104 % at 14 T and 2 K. The angle-resolved SdH oscillations reveal that the Fermi surface consists of three pockets with different anisotropy. In addition, we observe PHE and anisotropic MR (AMR) effect in the material for a wide temperature range. The effective mass, carrier density and quantum transport mobility are quantified in the system, and the Berry phase is discussed. Our work provides crucial insights into the electronic structure and the Fermi surface of the semimetal.