Pulsed laser synthesis of mesoporous metal chalcogenide thin films
Dorien E. Carpenter, Zahra Nasiri, Nithesh R. Palagiri, Kamron L. Strickland, Sumner B. Harris, David B. Geohegan, Renato P. Camata

TL;DR
This study demonstrates the pulsed laser deposition of mesoporous $eta$-FeSe thin films on MgO, revealing complex plasma dynamics, epitaxial growth with controlled porosity, and potential for electrocatalyst applications.
Contribution
It introduces a novel method for growing mesoporous, epitaxial metal chalcogenide films via pulsed laser deposition in inert gas, with detailed analysis of plasma dynamics and film structure.
Findings
Films exhibit 15% porosity with pore sizes below 100 nm.
Epitaxial growth with specific crystallographic orientation was achieved.
Growth involves oriented attachment of small clusters or nanoparticles.
Abstract
Mesoporous films of the metal chalcogenide -FeSe were grown on MgO substrates by KrF pulsed laser deposition (PLD) in an argon background. At 100 mTorr, gated intensified charge-coupled device imaging and ion probe measurements showed that the plasma plume responsible for crystal growth initially comprised three components, with distinct expansion velocities. Plume interactions with the substrate heater and ablation target gave rise to complex dynamics, including collisions between the charged leading edge -- rebounding between the substrate and the target -- and slower-moving species in the plume interior. Film growth was dominated by species with kinetic energies 0.5 eV/atom. X-ray reflectivity and atomic force microscopy revealed that films grown in this environment -- with a substrate temperature of 350C, a laser fluence of 1.0 J cm, and a 7.5 mm spot…
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