Revealing the Influence of Dopants on the Properties of Fluorite Structure Ferroelectrics

TL;DR

This paper investigates how dopants influence the properties of fluorite structure ferroelectrics, especially hafnium oxide, providing insights into stabilization, improved reliability, and application benefits through co-doping strategies.

Contribution

It offers new evidence on dopant effects and presents solutions for property enhancement and stabilization in fluorite ferroelectrics.

Findings

Dopants significantly alter ferroelectric properties.

Co-doping improves reliability and polarization behavior.

Enhanced crystallization and stability achieved.

Abstract

Fluorite structure ferroelectrics, especially hafnium oxide, are widely investigated for their application in non-volatile memories, sensors, actuators, RF devices and energy harvesters. Due to the metastable nature of the ferroelectric phase in these materials, dopants and process parameters need to be optimized for its stabilization. Here, we present clear evidence of how dopants affect the properties in this material system and solutions to achieve improved reliability, desired crystallization behavior and polarization hysteresis shape/position through co-doping. Finally, the benefits of co-doping in a variety of application fields are demonstrated.