Demonstrating a broadband Photon Detection Efficiency model on VUV sensitive Silicon Photomultipliers

TL;DR

This paper introduces a versatile analytic PDE model for VUV-sensitive Silicon Photomultipliers, validated with measurements and capable of predicting performance across various conditions for applications in physics and quantum computing.

Contribution

The paper presents a new PDE model for VUV-sensitive SiPMs that can be fitted to data and extrapolated for device design and performance prediction in different media and wavelengths.

Findings

Successfully fitted the PDE model to experimental data from 350 to 830 nm at 163 K.

Demonstrated the model's ability to predict PDE in liquid xenon and argon environments.

Provided insights into optimizing SiPM efficiency for specific scientific applications.

Abstract

We present a versatile analytic model describing Photon Detection Efficiency (PDE) for P-on-N silicon photomultipliers, with possible applications for device characterization, PDE extrapolation from limited data, simulation and design optimization. Using device specific parameters, SiPM PDE is modeled as a function of wavelength, angle of incidence, voltage, and limited temperature range. By factoring the PDE into transmission and internal efficiency, the performance in liquid nobles and other dense media can be predicted. We present the measurement of the absolute PDE from 350 to 830 nm at 163 K for two VUV sensitive SiPMs: a Hamamatsu VUV4 and Fondazione Bruno Kessler VUV-HD Technology. Additional measurements of relative PDE versus angle are also included. We successfully fit the model to the data, compare with literature and show the model's predictive power by extrapolating PDE to new wavelengths and operation in liquid xenon and argon, which is useful for estimating performance and the impact of external cross-talk in future large-scale experiments. Lastly we use the model to investigate optimizing efficiency for specific applications in astroparticle physics and quantum computing.