Low-Power Control of Resistance Switching Transitions in First-Order Memristors
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto, and Yuriy V. Pershin

TL;DR
This paper develops energy-efficient control protocols for first-order memristors, optimizing resistance switching with minimal power use by applying tailored voltage stimuli based on device models.
Contribution
It introduces a general approach to optimize switching transitions in memristors, demonstrating how specific voltage protocols depend on device properties and constraints.
Findings
Optimal protocols may involve single square voltage pulses or complex waveform stimuli.
The approach helps resolve the voltage-time dilemma in memristor programming.
Protocols are adaptable based on device models and operational constraints.
Abstract
In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most energy-efficient protocols for programming their resistances. A unique yet general approach to optimizing the switching transitions in devices of this kind is introduced. For pedagogical purposes, without loss of generality, the proposed control paradigm is applied to a couple of differential algebraic equation sets for voltage-controlled devices, specifically Kvatinsky's Voltage ThrEshold Adaptive Memristor mathematical description and Miranda's and Sune's dynamic balance model. It is demonstrated that, depending upon intrinsic physical properties of the device, captured in the model formulas and parameter setting, and upon constraints on programming time…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Neural Networks Stability and Synchronization · stochastic dynamics and bifurcation
