Tunable Light Emission from GaAsP and GaInP Islands Grown on Silicon (001) Nanotips Wafer

TL;DR

This paper demonstrates the monolithic integration of tunable light-emitting GaAsP and GaInP islands on silicon nanotips using nanoheteroepitaxy, enabling scalable silicon photonics with a wide range of optical properties.

Contribution

It introduces a novel nanoheteroepitaxy method for growing tunable III-V alloy islands on silicon without lattice matching, advancing integrated optoelectronic device fabrication.

Findings

Successful growth of GaAsP and GaInP islands on silicon nanotips.

Wide tunable emission spanning infrared to green wavelengths.

Potential for scalable, monolithic silicon photonic devices.

Abstract

In this work, we present the monolithic integration of GaAsP and GaInP islands, selectively grown on a CMOS-compatible Si nanotip wafer using gas-source molecular beam epitaxy via a nanoheteroepitaxy approach. These alloys span a wide electronic bandgap range, from infrared to green; making them highly attractive for optoelectronic applications in silicon photonics. In addition, the nanoheteroepitaxy method enables the growth of various alloy combinations without the need for a lattice-matched substrate. We discuss the epitaxial challenges involved, particularly the balance between growth selectivity and alloy miscibility. Despite these challenges, our work demonstrates a promising and scalable route toward tunable light sources and detectors monolithically integrated on silicon, contributing to the development of compact and efficient photonic components for next-generation silicon-based technologies.