Robust Topological Conduction in Bi2 Bi2Se3 Superlattices at Ambient Conditions
Lakshan Don Manuwelge Don, Md. Sakauat Hasan Sakib, Gracie Pillow, Sara McGinnis, Seth Shields, and Joseph P. Corbett

TL;DR
This study demonstrates the robustness of topological surface and edge states in Bi2 Bi2Se3 superlattices under ambient conditions, revealing force-dependent electronic transport mechanisms and the persistence of Dirac cone features.
Contribution
It provides the first detailed atomic-scale investigation of Bi2 Bi2Se3 superlattice electronic and edge states under ambient conditions using conducting AFM.
Findings
Edge states exhibit higher conductivity than terraces.
Transition from tunneling to ohmic behavior with increased force.
Dirac cone observed in dI/dV spectroscopy under specific conditions.
Abstract
Topologically protected surface states have garnered significant attention due to their robustness against perturbations and potential applications in optoelectronics. Bi2 Bi2Se3 is a topological semimetal composed of a 2D bismuthene sheet and a Bi2Se3 quintuple layer, forming an intrinsic superlattice. This study investigates the electronic structure and edge states of Bi2 Bi2Se3 [001] oriented films under ambient conditions through conducting atomic force microscopy (C-AFM). Point I-V spectroscopy and current imaging are used to characterize the surface and local transport properties of bismuthene and Bi2Se3 terminated layers. Our measurements reveal force dependent shifts in conduction mechanisms in both bismuthene and Bi2Se3, transitioning from direct tunneling (DT) at low forces and low biases, to Fowler Nordheim tunneling (FNT) at low forces and high biases, and eventually to a…
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Taxonomy
TopicsTopological Materials and Phenomena · Advanced Physical and Chemical Molecular Interactions · Graphene research and applications
