CoRuTiGe: A Possible Spin Gapless Semiconductor

TL;DR

This study investigates the quaternary Heusler alloy CoRuTiGe, revealing its spin gapless semiconductor properties through experimental and theoretical methods, with potential applications in spintronics.

Contribution

It provides the first detailed experimental and theoretical analysis of CoRuTiGe's structure, magnetic, and electronic properties, highlighting its spin gapless semiconductor behavior.

Findings

CoRuTiGe exhibits ferromagnetic order with 0.681 μB/f.u. at 5 K.

The material shows nearly linear resistivity decrease at high temperatures.

Hall effect indicates intrinsic and extrinsic contributions to anomalous Hall effect.

Abstract

We report experimental and theoretical investigations on the quaternary Heusler alloy CoRuTiGe, synthesized using the arc melting technique. Crystal structure analysis reveals a tetragonal structure at room temperature. Magnetization measurements as a function of temperature and magnetic field indicate ferromagnetic nature with a saturation magnetization of 0.681 mB/f.u. at 5 K. The temperature dependence of electrical resistivity shows a nearly linear decrease in the high-temperature range, indicating the spin gapless semiconductor like behavior of the material. This SGS nature is further supported by the temperature-independent carrier concentration and mobility. Hall effect analysis reveals that the anomalous Hall effect in CoRuTiGe arises from both intrinsic and extrinsic mechanisms. Additionally, a well-defined symmetric negative magnetoresistance is observed at low temperatures. These findings suggest that CoRuTiGe holds significant promise for spintronic applications.