Structural contribution to light-induced gap suppression in Ta$_2$NiSe$_5$
Zijing Chen, Chenhang Xu, Chendi Xie, Weichen Tang, Qiaomei Liu, Dong Wu, Qing Xu, Tao Jiang, Pengfei Zhu, Xiao Zou, Jun Li, Zhiwei Wang, Nanlin Wang, Dong Qian, Alfred Zong, and Dao Xiang

TL;DR
This study uses ultrafast electron diffraction and first-principles calculations to show that structural changes in Ta$_2$NiSe$_5$ primarily cause light-induced gap suppression, challenging the excitonic insulator interpretation.
Contribution
It provides the first quantitative analysis linking atomic displacements to gap suppression, emphasizing the role of lattice dynamics in phase transitions of correlated materials.
Findings
Structural change accounts for most of the photoinduced gap reduction.
Atomic displacements can explain the insulating gap suppression without excitonic effects.
Lattice dynamics are crucial in understanding nonequilibrium phase transitions.
Abstract
An excitonic insulator is a material that hosts an exotic ground state, where an energy gap opens due to spontaneous condensation of bound electron-hole pairs. TaNiSe is a promising candidate for this type of material, but the coexistence of a structural phase transition with the gap opening has led to a long-standing debate regarding the origin of the insulating gap. Here we employ MeV ultrafast electron diffraction to obtain quantitative insights into the atomic displacements in TaNiSe following photoexcitation, which has been overlooked in previous time-resolved spectroscopy studies. In conjunction with first-principles calculations using the measured atomic displacements, we find that the structural change can largely account for the photoinduced reduction in the energy gap without considering excitonic effects. Our work illustrates the importance of a quantitative…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · Inorganic Chemistry and Materials · Heusler alloys: electronic and magnetic properties
