Characterization of the optical response from variant InGaN nanowires emitting within the green spectral gap

TL;DR

This paper investigates the optical properties of InGaN nanowires in the green spectral gap, revealing how indium concentration affects emission and providing insights for improving optoelectronic device performance.

Contribution

It offers a detailed analysis of the morphology and optical behavior of InGaN NWs, linking indium compositional variation to emission properties, aiding optimization for LEDs.

Findings

Indium concentration increase causes a redshift in emission.

Nonuniform indium distribution affects luminescence properties.

Insights for optimizing growth and optical efficiency of NWs.

Abstract

This study provides a comprehensive physical and optical investigation of InGaN nanowires (NWs) designed to address the challenges posed by the green gap region. We conduct a detailed analysis of the morphology, structure, and optical characteristics of the NWs using characterization techniques such as scanning electron microscopy, cathodoluminescence spectroscopy, and confocal scanning microscopy. Notably, increasing the indium concentration causes a redshift in emission and alters the luminescence properties across different segments of NWs. Our findings provide valuable insight into the correlation between indium compositional nonuniformity and the optical emission properties of NWs. These insights contribute to optimizing the growth condition, color accuracy, and enhancing optical efficiency of NWs, highlighting their potential for next generation high-performance LEDs and optoelectronics devices.