A route to fully-compensated ferrimagnetic metal: electric-field annihilation of the bilayer bandgap
San-Dong Guo, Rongyuan Bian, Feng-Ren Fan, Alessandro Stroppa

TL;DR
This paper proposes a method to create fully-compensated ferrimagnetic metals by electrically closing the bilayer gap in 2D materials, validated through first-principles calculations on specific examples.
Contribution
It introduces a novel approach to realize FC-FIM metals via electric-field control in 2D systems, expanding the possibilities beyond traditional gapped states.
Findings
Electric field can annihilate the bilayer gap in specific 2D systems.
FC-FIM metal achieved only with AFM interlayer coupling and UMS building blocks.
Validated approach using first-principles calculations on bilayer MnOF, bilayer ScI2, and monolayer Hf2S.
Abstract
Fully-compensated ferrimagnet has garnered widespread attention due to its zero-net total magnetic moment and non-relativistic global spin splitting. In general, for a fully-compensated ferrimagnet, at least one spin channel should be gapped to ensure a zero-net total magnetic moment, which would lead to a fully-compensated ferrimagnetic (FC-FIM) semiconductor or half-metal, and appears to limit the existence of an FC-FIM metal. Here we propose that an FC-FIM metal can be achieved by electrically closing the gap of a bilayer system. Using two-dimensional (2D) ferromagnetic (FM) semiconductor as building block, we examine both FM and antiferromagnetic (AFM) interlayer couplings and distinguish unipolar magnetic semiconductor (UMS) and bipolar magnetic semiconductor (BMS) monolayers. It is concluded that an electric field can annihilate the bilayer gap and realize the FC-FIM metal only…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsMagnetic properties of thin films · Topological Materials and Phenomena · 2D Materials and Applications
