Mechanistic Insight into BEOL Thermal Transport via Optical Metrology and Multiphysics Simulation
Yang Shen, Shangzhi Song, Tao Chen, Kexin Zhang, Yu Chen, Lu Zhao, Puqing Jiang

TL;DR
This paper combines optical metrology and multiphysics simulation to quantitatively analyze and understand thermal transport mechanisms in BEOL multilayers of integrated circuits, providing insights for improved thermal management in 3D-stacked devices.
Contribution
It introduces a novel integrated experimental and simulation framework to characterize and mechanistically understand BEOL thermal transport at nanometer resolution.
Findings
Thermal resistance follows a series model.
Areal heat capacity scales linearly with metal content.
Dielectric materials are the primary limiting factor in heat conduction.
Abstract
As integrated circuits continue to scale down and adopt three-dimensional (3D) stacking, thermal management in the back-end-of-line (BEOL) has emerged as a critical design constraint. In this study, we present a combined experimental and simulation framework to quantitatively characterize and mechanistically understand thermal transport in BEOL multilayers. Using the Square-Pulsed Source (SPS) method, a time-resolved optical metrology technique, we measure cross-plane thermal resistance and areal heat capacity in semiconductor chips at nanometer resolution. Two fabricated chip samples, polished to the M4 and M6 interconnection layers, are analyzed to extract thermal properties of distinct multilayer stacks. Results show that thermal resistance follows a series model, while areal heat capacity scales linearly with metal content. To uncover the underlying physical mechanisms, we perform…
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Taxonomy
TopicsThermal properties of materials · 3D IC and TSV technologies · Advancements in Semiconductor Devices and Circuit Design
