Exploring the feasibility of probabilistic and deterministic quantum gates between T centers in silicon
Shahrzad Taherizadegan, Faezeh Kimiaee Asadi, Jia-Wei Ji, Daniel Higginbottom, and Christoph Simon

TL;DR
This paper evaluates various quantum gate protocols between T centers in silicon, highlighting a photon interference scheme with feedback that could achieve high success probability, fidelity, and efficiency for quantum computing applications.
Contribution
It provides the first analytical fidelity and efficiency calculations for a feedback-based photon interference quantum gate with T centers in silicon.
Findings
Photon interference scheme with feedback can surpass 50% success probability.
Analytical calculations of entanglement fidelity and efficiency considering imperfections.
Comparison shows the feedback scheme's potential for high-fidelity, efficient quantum gates.
Abstract
T center defects in silicon provide an attractive platform for quantum technologies due to their unique spin properties and compatibility with mature silicon technologies. We investigate several gate protocols between single T centers, including two probabilistic photon interference-based schemes, a near-deterministic photon scattering gate, and a deterministic magnetic dipole-based scheme. In particular, we study a photon interference-based scheme with feedback which can achieve success probabilities above 50%, and use the photon-count decomposition method to perform the first analytical calculations of its entanglement fidelity and efficiency while accounting for imperfections. We also calculate the fidelity and efficiency of the other schemes. Finally, we compare the performance of all the schemes, considering current and near-future experimental capabilities. In particular, we find…
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Taxonomy
TopicsAdvancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Quantum and electron transport phenomena
