Heterogeneously integrated lithium tantalate-on-silicon nitride modulators for high-speed communications
Jiachen Cai, Alexander Kotz, Hugo Larocque, Chengli Wang, Xinru Ji, Junyin Zhang, Daniel Drayss, Xin Ou, Christian Koos, Tobias J. Kippenberg

TL;DR
This paper demonstrates wafer-scale integration of lithium tantalate on silicon nitride photonic circuits, creating high-speed modulators with low voltage and broad bandwidth suitable for advanced optical communication systems.
Contribution
It introduces a novel hybrid platform combining lithium tantalate with silicon nitride, achieving high-speed, low-voltage modulators with record data rates for optical communications.
Findings
Modulators support up to 100 GHz bandwidth.
Achieve data rates of 333 Gbit/s with PAM4 signals.
Demonstrate low half-wave voltage of 6 V.
Abstract
Driven by the prospects of higher bandwidths for optical interconnects, integrated modulators involving materials beyond those available in silicon manufacturing increasingly rely on the Pockels effect. For instance, wafer-scale bonding of lithium niobate films onto ultralow loss silicon nitride photonic integrated circuits provides heterogeneous integrated devices with low modulation voltages operating at higher speeds than silicon photonics. However, in spite of its excellent electro-optic modulation capabilities, lithium niobate suffers from drawbacks such as birefringence and long-term bias instability. Among other available electro-optic materials, lithium tantalate can overcome these shortcomings with its comparable electro-optic coefficient, significantly improved photostability, low birefringence, higher optical damage threshold, and enhanced DC bias stability. Here, we…
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Taxonomy
TopicsSemiconductor materials and devices · Ferroelectric and Piezoelectric Materials · Semiconductor materials and interfaces
