Electrical control of quantum dots in GaAs-on-insulator waveguides for coherent single-photon generation

TL;DR

This paper demonstrates electrically controlled quantum dots integrated into GaAs-on-insulator waveguides on silicon, enabling coherent single-photon emission with high purity suitable for scalable quantum photonic circuits.

Contribution

It introduces a GaAs-on-insulator platform with integrated p-i-n junctions for charge noise suppression and Stark tuning, compatible with silicon photonics.

Findings

Narrow optical linewidths below 2 μeV achieved

High single-photon purity demonstrated

Successful integration with silicon photonics platform

Abstract

The integration of coherent quantum emitters with silicon photonic platforms essential for scalable quantum technologies. We demonstrate electrically controlled self-assembled quantum dots embedded in GaAs waveguides bonded onto a SiO2/Si substrate and coupled to low-loss SiN waveguides. Our approach uses a die-to-die adhesive bonding process to realize a GaAs-on-insulator platform incorporating a p-i-n junction for charge noise suppression and Stark tuning of excitonic transitions. Resonance fluorescence measurements reveal narrow optical linewidths below 2 {\mu}eV and high single-photon purity, matching the performance of unprocessed GaAs devices. These results establish a practical route to integrate high-coherence quantum light sources with mature silicon photonics, enabling scalable quantum photonic integrated circuits