Oxide Interface-Based Polymorphic Electronic Devices for Neuromorphic Computing
Soumen Pradhan (1), Kirill Miller (1), Fabian Hartmann (1), Merit Spring (2), Judith Gabel (2), Berengar Leikert (2), Silke Kuhn (1), Martin Kamp (1), Victor Lopez-Richard (3), Michael Sing (2), Ralph Claessen (2)

TL;DR
This paper introduces oxide-interface electronic devices with multiple functionalities for neuromorphic computing, demonstrating their potential for scalable, energy-efficient AI hardware and complex decision-making tasks.
Contribution
It presents a novel oxide-interface platform enabling programmable polymorphic devices with applications in neuromorphic systems and integrated circuits.
Findings
Demonstrated programmable oxide-interface devices with transistor, memristor, and memcapacitor functionalities.
Implemented reservoir computing and synaptic plasticity using these devices.
Showcased high-level decision-making tasks like patient-monitoring with reconfigurable circuits.
Abstract
Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor (CMOS)-technology, faces several critical challenges including scaling limitation of devices [1, 2], separation of computation and memory units [3] and most importantly, overall system energy efficiency [4]. While numerous materials with emergent functionalities have been proposed to overcome these limitations, scalability, reproducibility, and compatibility remain critical obstacles [5, 6]. Here, we demonstrate oxide-interface based polymorphic electronic devices with programmable transistor, memristor, and memcapacitor functionalities by manipulating the quasi-two-dimensional electron gas in LaAlO3/SrTiO3 heterostructures [7, 8] using lateral…
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