From Wye-Delta to Cross-Square Recursion Configurations in Graphene-Based Quantum Hall Arrays
Ngoc Thanh Mai Tran, Marta Musso, Dominick S. Scaletta, Wei-Chen Lin, Valery Ortiz Jimenez, Dean G. Jarrett, Massimo Ortolano, Curt A. Richter, Chi-Te Liang, David B. Newell, Albert F. Rigosi

TL;DR
This paper introduces a novel cross-square network configuration and pseudofractal recursion in graphene-based quantum Hall arrays to achieve extremely high quantized resistance standards, surpassing traditional designs.
Contribution
It presents a new network configuration and recursive design to significantly increase the effective resistance in quantum Hall array standards using graphene.
Findings
Achieved an effective resistance of 55.81 MΩ in one configuration.
Demonstrated a resistance of 27.61 GΩ in another configuration.
Projected resistance of 317.95 TΩ with advanced equipment.
Abstract
In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor {\nu} = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The robustness of the plateau is only exhibited at this Landau level filling factor and thus places a constraint on the quantized resistances that are accessible when constructing quantized Hall array resistance standards (QHARS) using epitaxial graphene on SiC. To overcome devices constrained by using Hall elements in series or in parallel, this work approaches the fabrication of a cross-square network configuration, which is similar to but departs slightly from conventional wye-delta designs and achieves significantly higher effective quantized resistance outputs. Furthermore, the use of pseudofractal-like recursion amplifies the ability to reach high resistances. QHARS devices designed as the ones here are…
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