Mixed Precision Photonic Computing with 3D Electronic-Photonic Integrated Circuits
Georgios Charalampous, Rui Chen, Mehmet Berkay On, Aslan Nasirov, Chun-Yi Cheng, Mahmoud AbdelGhany, Arka Majumdar, Ji Wang, Jennifer A. Black, Rajkumar Chinnakonda Kubendran, Caglar Oskay, Zhaojun Bai, Sam Palermo, Scott B. Papp, and S. J. Ben Yoo

TL;DR
This paper introduces a novel 3D integrated photonic-electronic computing system using phase-change materials and AlGaAs-CMOS technology, achieving high precision, scalability, and parallelism for efficient scientific computations.
Contribution
It presents a new architecture for mixed-precision photonic in-memory computing with hierarchical scaling, high Q-factor resonators, and general matrix multiplication capabilities.
Findings
Achieves over 12-bit precision in in-memory computing.
Supports scalable matrix multiplication across multiple wavelengths.
Enables high-dimensional PDE problem solving in constant time.
Abstract
We propose advancing photonic in-memory computing through three-dimensional photonic-electronic integrated circuits using phase-change materials (PCM) and AlGaAs-CMOS technology. These circuits offer high precision (greater than 12 bits), scalability (greater than 1024 by 1024), and massive parallelism (greater than 1 million operations) across the wavelength, spatial, and temporal domains at ultra-low power (less than 1 watt per PetaOPS). Monolithically integrated hybrid PCM-AlGaAs memory resonators handle coarse-precision iterations (greater than 5-bit most significant bit precision) through reversible PCM phase transitions. Electro-optic memristive tuning enables fine-precision updates (greater than 8-bit least significant bit precision), resulting in over 12-bit precision for in-memory computing. The use of low-loss PCM (less than 0.01 dB per cm) and electro-optical tuning yields…
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