Strong electron-electron interactions in a dilute weakly-localized metal near a metal-to-insulator transition
Nicol\`o D'Anna, Jamie Bragg, Aidan G. McConnell, Jakub Vonka, Procopios C. Constantinou, Juerong Li, Taylor J.Z. Stock, Steven R. Schofield, Neil J. Curson, Y. Soh, Marek Bartkowiak, Simon Gerber, Markus M\"uller, Guy Matmon, Gabriel Aeppli

TL;DR
This study investigates the metal-insulator transition in ultra-thin dopant layers on silicon, revealing dominant electron-electron interactions near the transition that challenge conventional localization interpretations.
Contribution
It demonstrates the realization of a two-dimensional disordered Hubbard model in silicon dopant layers and uncovers the dominance of electron-electron interactions over weak localization effects near the MIT.
Findings
Electron-electron interactions dominate near the MIT.
Weak localization effects are replaced by Zeeman-scaling electron-electron contributions.
Negative conductance contributions challenge Kondo regime interpretations.
Abstract
Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candidate platform for quantum computing. The metal-to-insulator transition in this material has therefore been one of the most studied phenomena in condensed matter physics, and has been revisited with considerable profit each time a new fabrication technology has been introduced. Here we take advantage of recent advances in creating ultra-thin layers of Bohr-atom-like dopants to realize the two-dimensional disordered Hubbard model at half-filling and its metal-to-insulator transition (MIT) as a function of mean distance between atoms. We use gas-phase dosing of dopant precursor molecules on silicon to create arsenic and phosphorus -layers as thin as 0.4~nm and as dilute as 10~cm. On…
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