Precision high-speed quantum logic with holes on a natural silicon foundry platform

TL;DR

This paper demonstrates high-fidelity single- and two-qubit gates using hole spins in natural silicon, leveraging industrial fabrication to advance scalable quantum computing with silicon-based qubits.

Contribution

It reports the highest performance in natural silicon for hole spin qubits, achieving near 99.8% single-qubit fidelity and a two-qubit quality factor of 240, using fast control and industrial fabrication.

Findings

Single-qubit fidelity up to 99.8%

Two-qubit gate quality factor of 240

Performance surpasses previous natural silicon hole spin qubits

Abstract

Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst retaining all the salient features of a quantum dot qubit architecture. However, silicon hole spin qubits are not as advanced as electrons, due to increased susceptibility to disorder and more complex spin physics. Here we demonstrate single-qubit gate fidelities up to 99.8% and a two-qubit gate quality factor of 240, indicating a physical fidelity limit of 99.7%. These results represent the highest performance reported in natural silicon to date, made possible by fast qubit control, exchange pulsing, and industrial-grade fabrication. Notably, we achieve these results in a near-identical device as used for highly reproducible, high-fidelity electron spin qubits. With isotopic purification and device-level optimisations in the future, our hole spin qubits are poised to unlock a new operation regime for quantum CMOS architectures.