Hybrid Scandium Aluminum Nitride/Silicon Nitride Integrated Photonic Circuits
Jiangnan Liu, Shuai Liu, Abdur-Raheem Al-Hallak, Huabin Yu, Zhengwei Ye, Yuheng Zhang, Zheshen Zhang, Zetian Mi

TL;DR
This paper introduces a hybrid silicon nitride and scandium aluminum nitride waveguide platform that significantly reduces optical loss, enabling scalable, functional quantum photonic circuits with potential for advanced optical applications.
Contribution
It presents a monolithic integration of Si3N4 and ScAlN waveguides achieving low loss and high quality factors, overcoming previous limitations of scandium-doped aluminum nitride.
Findings
Achieved an intrinsic quality factor of 3.35 x 10^5.
Reduced propagation loss to 1.03 dB/cm, comparable to commercial waveguides.
Demonstrated a scalable platform retaining ScAlN functionalities.
Abstract
Scandium-doped aluminum nitride has recently emerged as a promising material for quantum photonic integrated circuits (PICs) due to its unique combination of strong second-order nonlinearity, ferroelectricity, piezoelectricity, and complementary metal-oxide-semiconductor (CMOS) compatibility. However, the relatively high optical loss reported to date-typically above 2.4 dB/cm-remains a key challenge that limits its widespread application in low-loss PICs. Here, we present a monolithically integrated -ScAlN waveguide platform that overcomes this limitation. By confining light within an etched waveguide while preserving the functional properties of the underlying ScAlN layer, we achieve an intrinsic quality factor of , corresponding to a propagation loss of 1.03 dB/cm-comparable to that of commercial…
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Taxonomy
TopicsAdvanced Fiber Laser Technologies · Acoustic Wave Resonator Technologies · Photonic and Optical Devices
