Effective 2D Envelope Function Theory for Silicon Quantum Dots
Christian W. Binder, Guido Burkard, Andrew J. Fisher

TL;DR
This paper introduces a rigorous 2D envelope function method for silicon quantum dots that accurately captures 3D electrostatics and valley physics, enabling efficient simulation of electron spin qubits with validated accuracy and computational savings.
Contribution
It develops a first-principles 2D envelope function theory that incorporates valley degrees of freedom and improves upon naive slicing methods for silicon quantum dots.
Findings
Accurately reproduces 3D simulation results for silicon quantum dots.
Demonstrates computational efficiency for two-electron system simulations.
Explicitly includes valley physics in a 2D formalism.
Abstract
We present a rigorous method to reduce the three-dimensional (3D) description of a quantum dot in silicon to an effective two-dimensional (2D) envelope function theory for electron spin qubits. By systematically integrating out the strongly confined vertical dimension using a Born-Oppenheimer-inspired ansatz at the envelope-function level, we derive an effective in-plane potential that faithfully captures the essential electrostatics of the full 3D system. Considering the lowest two eigenstates of the out-of-plane direction, this reduction leads to the natural and explicit emergence of the valley degree of freedom within a 2D formalism, which is derived here from first principles. We validate the accuracy of the method through comparisons with full 3D simulations and demonstrate its superiority over naive 2D slicing, particularly in the presence of interface roughness. Crucially, the…
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design
