Disorder driven crossover between anomalous Hall regimes in Fe$_3$GaTe$_2$
Sang-Eon Lee, Minkyu Park, W. Kice Brown, Vadym Kulichenko, Yan Xin, S. H. Rhim, Chanyong Hwang, Jaeyong Kim, Gregory T. McCandless, Julia Y. Chan, Luis Balicas

TL;DR
This study reveals how disorder influences the anomalous Hall conductivity in Fe$_3$GaTe$_2$, showing a crossover from disorder-dependent to intrinsic behavior as conductivity increases, supported by experimental and theoretical analysis.
Contribution
It demonstrates the disorder-driven crossover between different anomalous Hall regimes in Fe$_3$GaTe$_2$, combining experimental measurements with DFT calculations to elucidate the underlying mechanisms.
Findings
Intrinsic AHC is disorder-independent with a high value of ~420 Ω^{-1}cm^{-1}.
Scaling relation σ_{xy} ∝ σ_{xx}^{1.6} observed in low-conductivity regime.
Crossover from disorder-dependent to intrinsic AHC as conductivity increases.
Abstract
The large anomalous Hall conductivity (AHC) of the Fe(Ge,Ga)Te compounds has attracted considerable attention. Here, we expose the intrinsic nature of AHC in FeGaTe crystals characterized by high conductivities, which show disorder-independent AHC with a pronounced value 420 cm. In the low conductivity regime, we observe the scaling relation , which crosses over to as increases. Disorder in low-conductivity crystals is confirmed by the broadening of a first-order transition between ferromagnetism and the ferrimagnetic ground state. Through density functional theory (DFT) calculations, we reveal that the dominant sources of Berry curvature are located a few hundred meV below the Fermi energy around the -point.…
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