Enhanced Biaxial Compressive Strain Tuning of 2D semiconductors via Hot Dry Transfer on Polymer Substrates
Alvaro Cortes-Flores, Eudomar Henr\'iquez-Guerra, Lisa Almonte, Hao Li, Andres Castellanos-Gomez, M. Reyes Calvo

TL;DR
This study demonstrates a novel hot-dry transfer method to induce large biaxial compressive strain in 2D WS$_2$ using polymer substrates, achieving unprecedented excitonic energy shifts at cryogenic temperatures.
Contribution
The paper introduces a pre-straining technique combined with hot-dry transfer to significantly enhance biaxial strain in 2D materials at cryogenic temperatures, surpassing previous strain levels.
Findings
Achieved up to ~0.5% biaxial compressive strain in WS$_2$
Observed a ~200 meV blueshift in exciton energies at 5 K
Strain transfer efficiency increases at cryogenic temperatures
Abstract
Strain engineering is an effective tool for tailoring the properties of two-dimensional (2D) materials, especially for tuning quantum phenomena. Among the limited methods available for strain engineering under cryogenic conditions, thermal mismatch with polymeric substrates provides a simple and affordable strategy to induce biaxial compressive strain upon cooling. In this work, we demonstrate the transfer of unprecedentedly large levels of uniform biaxial compressive strain to single-layer WS by employing a pre-straining approach prior to cryogenic cooling. Using a hot-dry-transfer method, single-layer WS samples were deposited onto thermally expanded polymeric substrates at 100 C. As the substrate cools to room temperature, it contracts, inducing biaxial compressive strain (up to ~0.5%) in the WS layer. This pre-strain results in a measurable blueshift in excitonic…
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