Nanoscale Modulation of Flat Bands via Controllable Charge-Density-Waves Defects in 4Hb-TaS2
Wooin Yang, Siavash Karbasizadeh, Hoyeon Jeon, Saban Hus, Arthur P. Baddorf, Sai Mu, Tom Berlijn, Haidong Zhou, Wonhee Ko, An-Ping Li

TL;DR
This study demonstrates how controllable charge-density-wave defects in 4Hb-TaS2 can modulate flat electronic bands, revealing new ways to manipulate electron correlations and quantum phases at the atomic scale.
Contribution
It introduces a method to create, erase, and control CDW defects in 4Hb-TaS2, elucidating their effects on flat bands through combined experimental and theoretical approaches.
Findings
Type 1 CDW defects suppress flat bands due to structural distortion.
Type 2 CDW defects increase flat band filling by reducing interlayer charge transfer.
STM manipulation enables atomic-scale control of CDW defects.
Abstract
Electron correlation is a main driver of exotic quantum phases and their interplay. The 4Hb-TaS2 system, possessing intrinsic heterostructure of 1T- and 1H-TaS2 monolayers, offers a unique opportunity to control electron correlation by distorting the atomic lattice or tuning interlayer coupling. Here, we investigated intrinsically deformed charge-density-waves (CDW) in the 1T layer of 4Hb-TaS2 to elucidate and control their effects on flat bands using scanning tunneling microscopy and spectroscopy (STM/S) combined with first-principles calculations. We identified two types of CDW defects: Type 1 has structural distortion and locally suppressed flat bands, while Type 2 features an increased flat band filling factor of intact CDW structure. Density functional theory calculations indicate that a sulfur vacancy in the 1T layer distorts the CDW structure and gives rise to a Type 1, whereas a…
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