Antibonding and Electronic Instabilities in GdRu2X2 (X = Si, Ge, Sn): A New Pathway Toward Developing Centrosymmetric Skyrmion Materials
Dasuni N. Rathnaweera, Xudong Huai, K. Ramesh Kumar, Sumanta Tewari, Micha{\l} J. Winiarski, Richard Dronskowski, and Thao T. Tran

TL;DR
This study explores how chemical bonding and electronic instabilities in GdRu2X2 compounds influence skyrmion formation, revealing new insights into designing materials with skyrmions for spintronic applications.
Contribution
It uncovers the connection between chemical bonding, electronic structure, and skyrmion emergence in GdRu2X2 compounds, providing a new framework for material development.
Findings
GdRu2Si2 exhibits a specific Fermi surface nesting vector.
GdRu2Ge2 shows two inequivalent Fermi surface nesting vectors.
GdRu2Sn2 features multiple nesting vectors and competing magnetic interactions.
Abstract
Chemical bonding is key to unlocking the potential of magnetic materials for future information technology. Magnetic skyrmions are topologically protected nano-sized spin textures that can enable high-density low-power spin-based electronics. Despite increasing interest in the discovery of new skyrmion hosts and their characterization, the electronic origins of the skyrmion formation remain unknown. Here, we study GdRu2X2 (X = Si, Ge, Sn) as a model system to study the connection among chemical bonding, electronic instability, and the critical temperature and magnetic field at which skyrmions evolve. The nature of the electronic structure of GdRu2X2 is characterized by chemical bonding, Fermi surface analysis, and density of energy function. As X-p orbitals become more extended from Si-3p to Ge-4p and Sn-5p, improved interactions between the Gd spins and the [Ru2X2] conduction layer and…
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Taxonomy
TopicsHeusler alloys: electronic and magnetic properties · Topological Materials and Phenomena · 2D Materials and Applications
