Antiferromagnetic Hall-Memristors

TL;DR

This paper introduces a novel antiferromagnetic spin-memristor utilizing Hall-memristance and the nonlinear Edelstein effect, offering a new approach for energy-efficient memory devices based on controllable nonlinear Hall effects.

Contribution

It presents the design and analysis of a four-terminal antiferromagnetic Hall-memristor leveraging the nonlinear Edelstein effect for memory control, extending previous two-terminal devices.

Findings

Demonstrates viability of antiferromagnetic Hall-memristors

Extends device architecture to four terminals

Shows controllable nonlinear Hall effect in CuMnAs

Abstract

Spin-memristors are a class of materials that can store memories through the control of spins, potentially leading to novel technologies that address the constraints of standard silicon electronics, thereby facilitating the advancement of more intelligent and energy-efficient computing systems. In this work, we present a spin-memristor based on antiferromagnetic materials that exhibit Hall-memresistance. Moreover, the nonlinear Edelstein effect acts as both a writer and eraser of memory registers. We provide a generic symmetry-based analysis that supports the viability of the effect. To achieve a concrete realization of these ideas, we focus on CuMnAs, which has been shown to have a controllable nonlinear Hall effect. Our results extend the two-terminal spin-memristor setting, which is customarily the standard type of device in this context, to a four-terminal device.